PART |
Description |
Maker |
MJF122-D MJF127 |
Complementary Power Darlingtons For Isolated Package Applications Power 5A 100V Darlington NPN Power 5A 100V PNP
|
ON Semiconductor
|
IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
IRF510S IRF510STRL IRF510STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
|
IRF[International Rectifier]
|
IRF530 IRF530PBF |
14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A) Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
IRF540NL IRF540NS IRF540NSTRR IRF540NLPBF IRF540NS |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A) Power MOSFET(Vdss=100V/ Rds(on)=44mohm/ Id=33A)
|
IRF[International Rectifier]
|
BDW93A BDW94A BDW93 BDW93B BDW93C BDW94 BDW94B BDW |
POWER TRANSISTORS(12A,45-100V,80W) 功率晶体管(2A ,45 - 100V的,80瓦) RJZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 12V; Power: 2W; 2W Single and Dual Outputs POWER TRANSISTORS(12A/45-100V/80W) POWER TRANSISTORS(12A45-100V80W)
|
Mospec Semiconductor, Corp. MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN Power 2A 100V Darlington PNP Complementary Darlington Power Transistors
|
ONSEMI[ON Semiconductor]
|
IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
IRFP4710 IRFP4710PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rdson)最大值\u003d 0.014ohm,身份证\u003d 72A条)
|
IR International Rectifier, Corp.
|
FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的,0.300欧姆,拉德硬,SEGR性,P通道功率MOSFET 7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL SIPMOS Power Transistor
|
Infineon Technologies AG
|